Electronic States of Narrow Gap Semiconductors Under Multi Extreme Conditions is popular PDF and ePub book, written by Kazuto Akiba in 2019-04-04, it is a fantastic choice for those who relish reading online the Technology & Engineering genre. Let's immerse ourselves in this engaging Technology & Engineering book by exploring the summary and details provided below. Remember, Electronic States of Narrow Gap Semiconductors Under Multi Extreme Conditions can be Read Online from any device for your convenience.
Electronic States of Narrow Gap Semiconductors Under Multi Extreme Conditions Book PDF Summary
This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.
Detail Book of Electronic States of Narrow Gap Semiconductors Under Multi Extreme Conditions PDF
- Author : Kazuto Akiba
- Release : 04 April 2019
- Publisher : Springer
- ISBN : 9789811371073
- Genre : Technology & Engineering
- Total Page : 147 pages
- Language : English
- PDF File Size : 13,8 Mb
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