Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors is popular PDF and ePub book, written by Mengqi Fu in 2018-11-29, it is a fantastic choice for those who relish reading online the Science genre. Let's immerse ourselves in this engaging Science book by exploring the summary and details provided below. Remember, Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors can be Read Online from any device for your convenience.

Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors Book PDF Summary

This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Detail Book of Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors PDF

Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors
  • Author : Mengqi Fu
  • Release : 29 November 2018
  • Publisher : Springer
  • ISBN : 9789811334443
  • Genre : Science
  • Total Page : 102 pages
  • Language : English
  • PDF File Size : 8,8 Mb

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