The Source Drain Engineering of Nanoscale Germanium based MOS Devices is popular PDF and ePub book, written by Zhiqiang Li in 2016-03-24, it is a fantastic choice for those who relish reading online the Technology & Engineering genre. Let's immerse ourselves in this engaging Technology & Engineering book by exploring the summary and details provided below. Remember, The Source Drain Engineering of Nanoscale Germanium based MOS Devices can be Read Online from any device for your convenience.
The Source Drain Engineering of Nanoscale Germanium based MOS Devices Book PDF Summary
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Detail Book of The Source Drain Engineering of Nanoscale Germanium based MOS Devices PDF
- Author : Zhiqiang Li
- Release : 24 March 2016
- Publisher : Springer
- ISBN : 9783662496831
- Genre : Technology & Engineering
- Total Page : 71 pages
- Language : English
- PDF File Size : 20,8 Mb
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