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Strain Induced Effects in Advanced MOSFETs Book PDF Summary

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Detail Book of Strain Induced Effects in Advanced MOSFETs PDF

Strain Induced Effects in Advanced MOSFETs
  • Author : Viktor Sverdlov
  • Release : 06 January 2011
  • Publisher : Springer Science & Business Media
  • ISBN : 9783709103821
  • Genre : Technology & Engineering
  • Total Page : 260 pages
  • Language : English
  • PDF File Size : 8,7 Mb

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