Epitaxial Design Optimizations for Increased Efficiency in GaAs Based High Power Diode Lasers is popular PDF and ePub book, written by Thorben Kaul in 2021-04-09, it is a fantastic choice for those who relish reading online the Science genre. Let's immerse ourselves in this engaging Science book by exploring the summary and details provided below. Remember, Epitaxial Design Optimizations for Increased Efficiency in GaAs Based High Power Diode Lasers can be Read Online from any device for your convenience.
Epitaxial Design Optimizations for Increased Efficiency in GaAs Based High Power Diode Lasers Book PDF Summary
This work presents progress in the root-cause analysis of power saturation mechanisms in continuous wave (CW) driven GaAs-based high-power broad area diode lasers operated at 935 nm. Target is to increase efficiency at high optical CW powers by epitaxial design. The novel extreme triple asymmetric (ETAS) design was developed and patented within this work to equip diode lasers that use an extremely thin p-waveguide with a high modal gain. An iterative variation of diode lasers employing ETAS designs was used to experimentally clarify the impact of modal gain on the temperature dependence of internal differential quantum efficiency (IDQE) and optical loss. High modal gain leads to increased free carrier absorption from the active region. However, less power saturation is observed, which must then be attributed to an improved temperature sensitivity of the IDQE. The effect of longitudinal spatial hole burning (LSHB) leads to above average non-linear carrier loss at the back facet of the device. At high CW currents the junction temperature rises. Therefore, not only the asymmetry of the carrier profile increases but also the average carrier density in order to compensate for the decreased material gain and increased threshold gain. This carrier non-pinning effect above threshold is found in this work to enhance the impact of LSHB already at low currents, leading to rapid degradation of IDQE with temperature. This finding puts LSHB into a new context for CW-driven devices as it emphasizes the importance of low carrier densities at threshold. The carrier density was effectively reduced by applying the novel ETAS design. This enabled diode lasers to be realized that show minimized degradation of IDQE with temperature and therefore improved performance in CW operation.
Detail Book of Epitaxial Design Optimizations for Increased Efficiency in GaAs Based High Power Diode Lasers PDF
- Author : Thorben Kaul
- Release : 09 April 2021
- Publisher : Cuvillier Verlag
- ISBN : 9783736963962
- Genre : Science
- Total Page : 136 pages
- Language : English
- PDF File Size : 11,8 Mb
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