Analysis and Characterization of GaAs MOSFET with High K Dielectric Material is popular PDF and ePub book, written by Krupal Pawar in 2015-02-11, it is a fantastic choice for those who relish reading online the Technology & Engineering genre. Let's immerse ourselves in this engaging Technology & Engineering book by exploring the summary and details provided below. Remember, Analysis and Characterization of GaAs MOSFET with High K Dielectric Material can be Read Online from any device for your convenience.
Analysis and Characterization of GaAs MOSFET with High K Dielectric Material Book PDF Summary
Scientific Essay from the year 2015 in the subject Engineering - Communication Technology, , course: VLSI Technology, language: English, abstract: Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20€0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.
Detail Book of Analysis and Characterization of GaAs MOSFET with High K Dielectric Material PDF
- Author : Krupal Pawar
- Release : 11 February 2015
- Publisher : GRIN Verlag
- ISBN : 9783656895534
- Genre : Technology & Engineering
- Total Page : 14 pages
- Language : English
- PDF File Size : 7,5 Mb
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