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High Sensitivity Moir 9 Interferometry with Phase Shifting at Nano Resolution Book PDF Summary

Due to insatiate demand for miniaturization of electronics, there is a need for new techniques to measure full-field strain at micro-scale structures. In addition, Micro-Electronic-Mechanical-Systems (MEMS) require a high resolution and high sensitivity material property characterization technique. In this study, a theoretic model for a high sensitivity Moiré Interferometry (MI) for measuring nano-scale strain field has been developed. The study also includes the application of the proposed measurement technique for the study of reliability of next generation nano-electronics/power electronics. The study includes both theoretical and experimental work. In the theoretical part, a far field modeling of a Moiré Interferometer (MI) using the mode decomposition method is proposed according to the analytical formulation from the scalar diffraction theory.^The wave propagation within the defined MI far field domain is solved analytically for a single frequency surface relieved grating structure following the Rayleigh-Sommerfeld formulation under the paraxial approximation. It is shown that the far-field electrical field and the intensity interferogram can be calculated using the mode decomposition method. Furthermore, the near-field (propagation distance

Detail Book of High Sensitivity Moir 9 Interferometry with Phase Shifting at Nano Resolution PDF

High Sensitivity Moir  9 Interferometry with Phase Shifting at Nano Resolution
  • Author : Bicheng Chen
  • Release : 20 September 2024
  • Publisher : Unknown
  • ISBN : OCLC:769459439
  • Genre : Uncategoriezed
  • Total Page : 282 pages
  • Language : English
  • PDF File Size : 17,5 Mb

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